学术讲座
吕杭炳:New HfOx BasedFerroelectric Memories
发布时间:2019-11-06   浏览次数:51

讲座题目:New HfOx BasedFerroelectric Memories

主讲人:吕杭炳 研究员

主持人:段纯刚 教授

开始时间:2019年11月7日下午15:00

讲座地址:闵行校区物理楼226报告厅

报告人简介

Hangbing Lv,senior member of IEEE, currently serves as a full professor in Institute ofMicroelectronics, Chinese Academy of Sciences (IMECAS). He was grantedOutstanding Youth Foundation from National Natural Science Foundation of China(NSFC) and has more than 15 years of experience on R&D on emergingnonvolatile memories, including device physics, integration, Macro design, andapplications. He has authored or co-authored more than 150 journal papers onNature Communications, Advanced Materials, IEEE Electron Device Letters, aswell as conference papers on IEDM, VLSI, IMW, et al. He currently serves as TPCmember of IMW.

报告内容简介

The traditionalmemory devices cannot possess high speed and high density at the same time, thecomputing system needs to build up memory hierarchy to achieve the balance ofperformance and capacity. Due to significant performance gap between differentlevels of memory, massive amounts of data transportation will lead to thedecrease of computational efficiency and bandwidth. The new doped ferroelectricHfOx is a promising material for memory application, with no obvious scalingissue that the conventional perovskite ferroelectric materials have. In thistalk, the development of ferroelectric HfOx material will be firstly introducedand then will present two new devices based on HfOx ferroelectric material:ferroelectric diode and hybrid memory in ferroelectric transistor. Thedirection of ferroelectric diode is governed by the polarization of ferroelectricmaterials, showing excellent memory switching effect. Benefiting from thesimple structure and build-in nonlinearity, this Fe-diode can be easilyexpanded into the three-dimensional structure for high density storage. InFe-FET device, due to the intrinsic trap sites in HZO material, low voltagecharge trapping effect could be observed, showing DRAM like performance, withhigh speed and high endurance. At higher voltage region, the Fe-FET device willwork at polarization switching mode, exhibiting NVM like performance, with goodretention and high speed. Due to the excellent compatibility with logictransistor, this hybrid Fe-FET memory could be a promising solution for eDRAMand eNVM in SOC system.